Publicaciones en revistas internacionales con agradecimiento al proyecto:
1 – “Strained Silicon Modulation Field Effect Transistor as a new Sensor of terahertz radiation.”
Submitted to Semicond. Sci. Technol. 2011.
Y M Meziani, E. Garcia, E. Velazquez, E. Diez, A. Elmoutaouakil, T. Otsuji, and K. Fobelets.
2 – “Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell.”
Appl. Phys. Lett., vol. 99, no. 2, p. 243504, Dec. 2011.
V. V. Popov, D. V. Fateev, T. Otsuji, Y. M. Meziani, D. Coquillat, and W. Knap.
3 – “THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors.”
Acta Physica Polonica A, vol. 120, no. 5, p. 924, Feb. 2011.
N. Dyakonovaa, A. El Fatimyc, Y. Mezianid, D. Coquillata, W. Knapa, F. Teppea, P.Buzatua, M. Diforte-Poissone, C. Duae, and S. Piotrowicze.
4 – “Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure.”
Solid-State Electronics, vol. 78, no. C, pp. 109–114, Dec. 2012.
T. Watanabe, S. B. Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V.Popov, D. Coquillat, W. Knap, Y. Meziani, and T. Otsuji.
Publicaciones en libro con agradecimiento al proyecto:
1 – “Detection of Terahertz Radiation from Submicron Plasma Waves Transistors”.
Book title: Bolometers, ISBN: 979-953-307-348-3, edited by: Dr. Unil Perera (2012).
Y.M. Meziani, E. Garcia, E. Velazquez, E. Diez, J. Calvo, K. Fobelets and W. Knap.
Publicaciones en congresos internacionales con agradecimiento al proyecto:
1 – “Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation.”
Invited talk at 1st International Symposium on Terahertz Nanoscience (TeraNano 2011), and 2nd Workshop of International Terahertz Research Network (GDR-I THz 2011), 24-29 November, 2011, Osaka, Japan
Y. M. Meziani
2 – “Strained silicon modulation fet as new sensor for terahertz radiation.”
Invited talk at 3rd International Conference on Advanced Nano Materials (ANM2010), 12-15 September 2010, Agadir-Morocco
Y.M. Meziani, E. Diez, E. Velazquez, K. Fobelets, A. Elmoutaouakil, and T. Otsuji
3 – “Non-resonant terahertz detection by strained-Si modulation doped field effect transistors: first terahertz imaging.”
1st International Symposium on Terahertz Nanoscience (TeraNano 2011) and 2nd Workshop of International Terahertz Research Network (GDR-I THz 2011), 24-29 November, 2011, Osaka, Japan
E. García-García, Y.M. Meziani and J.E. Velázquez-Pérez, D. Coquillat, N. Dyakonova, W. Knap, I. Grigelionis, K. Fobelets
4 – “Plasmonic detection of terahertz radiation in a double-grating-gate transistor structure with an asymmetric unit cell.”
Talk at International Symposium “Nanophotonics and Nanoelectronics, 14-18 March 2011, Nizhnii Novgorod, Russia”
V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap
5 – “Terahertz photomixing in Strained Silicon MODFET.”
35th International Conference on Infrared, Millimeter and THz Waves (IRMMW-THz 2010), 5-10 September 2010, Rome, Italy
Y.M. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets and T. Otsuji
6 – “Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors.”
35th International Conference on Infrared, Millimeter and THz Waves (IRMMW-THz 2010), 5-10 September 2010, Rome, Italy
N. Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D.Théron, and C. Gaquiere, M. A. Poisson, S. Delage
7 – “Detection of high power THz radiation by GaAs high electron mobility and Si field effect transistors.”
35th International Conference on Infrared, Millimeter and THz Waves (IRMMW-THz 2010), 5-10 September 2010, Rome, Italy
C. Drexler C, N. Dyakonova, M. Schafberger, K. Karpierz, J. Karch, H. Videlier, Y. Meziani, P. Olbrich, W. Knap, S. Ganichev
8 – “Enhacement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors.”
16th international conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON16), 24-28 August 2009, Montpellier – France.
Y. M. Meziani, T. Nishimura, H. Tsuda, T. Suemitsu, T. Otsuji, W. Knap, and V. V. Popov,
9 – “Terahertz detection in a double-grating-gate heterotransistor.”
16th international conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON16), 24-28 August 2009, Montpellier – France.
D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, Y. M. Meziani, T. Otsuji, V. V. Popov, and G. M. Tsymbalov
10 – “Optical and transport characterization in graphene nanostructures.”
16th international conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON16), 24-28 August 2009, Montpellier – France.
E. Diez, M. Amado, Y. M. Meziani, J. M. Cervero, J. M. Caridad, F. Rosella, V. Bellani, and D. Lopez Romero.
