Jesús Enrique Velázquez-Pérez pursued his PhD studies at the Institut d’Electronique Fondamentale (IEF) Université Paris-XI, Orsay, France in the field of device simulation using Monte Carlo, MC, models from 1987 to 1990. In 1990, he joined the Departmento of Física Aplicada of the Universidad de Salamanca (USAL), where he is currently Professor Titular of Electronics. From his start at the USAL, he focused his research on noise modelling of semiconductor devices using microscopic technique based on MC techniques. The in-house MC simulation software was extended in the mid of the 90s to allow the study of DC, AC and noise performances of advanced heterojunction transistors. From 1998 to 2004 he was also an invited researcher in the Electrical and Electronic Engineering Department of the Imperial College London, UK, working in the development of n-channel Si/SiGe MODFETs for low-power high-frequency applications. This work in was subsequently extended to the development of Si/SiGe MODFET plasma wave detectors. J.E. Velázquez-Pérez has published more than 55 papers and over 85 conference contributions and holds one patent.
Nanophotonics , 11(3), 519-529, (2022) (2022)''
Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs
Sensors 21, 688 (2021) https://doi.org/10.3390/s21030688 (2021)''
Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect
Optics Letters , 46, 3061-3064 (2021) (2021)''
Asymmetric dual-grating gates graphene FET for detection of terahertz radiations
APL Photonics 5, 066102 (2020) (2020)''
Improvement of a Terahertz Detector Performance Using the Terajet Effect in a Mesoscale Dielectric Cube: Proof of Concept
Phys. Status Solidi - Rapid Res. Lett., 2020, 1900700, doi: 10.1002/pssr.201900700 (2020)''
Sub-THz Imaging Using Non-Resonant HEMT Detectors
Sensors 2018, 18(2), 543; doi:10.3390/s18020543 (2018)''
Sub-THz Response of Strained-Silicon MODFETs
Phys. Status Solidi A 2017, 1700475; https://doi.org/10.1002/pssa.201700475 (2017)''
Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation
International Journal of High Speed Electronics and Systems Vol. 25, Nos. 3 & 4 (2016) 1640020 (2016)''
Terahertz spectroscopy of a multilayers flake of graphene
Journal of Physics: Conference Series 647 (2015)''
Terahertz time domain spectroscopy for chemical identification
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, art. no. 6481377, pp. 199-202. (2013)''
Effect of the gate scaling on the analogue performance of s-Si CMOS devices
Semiconductor Science and Technology, 26 (9), art. no. 095030. (2011)''
Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation
Semicond. Sci. Technl. 26, 105006 (4pp) (2011)''
Magneto-Transport and Optical Characterization of Amorphous Silicon Tandem Cells
Proceedings de 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, (Valencia. España), 3240-3242, ISBN -936338-26-4 (2010)''
Solar cell Manufacturing: As-cut mc-Si Wafers discrimination using magnetotransport, optical and lifetime measurements
Proceedings de 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, (Valencia. España), 1969-1963, ISBN -936338-26-4 (2010)''
Analysis of RF noise performance of Si/SiGe pseudomorphic MOSFETs
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09, art. no. 4800538, pp. 479-482. (2009)''