Dr. Jaime Calvo-Gallego received his B.Sc. degree in telecommunication engineering from the Universidad de Valladolid (UVA), his M.Sc. degree in telecommunication engineering from the Universidad Politécnica de Valencia (UPV), and his Ph.D. degree in telecommunication engineering (Dr. Eng.) from the Universidad Politécnica de Madrid (UPM). For several years, he worked as Project Engineer in the company INDRA SISTEMAS S.A., he was an Assistant Professor with the UPM and with the Universidad Carlos III de Madrid (UC3M), and he was Chercheur Invité at L’Institut d’Électronique Fondamentale, Université Paris-Sud (U-PSUD) – CNRS, Paris, France. He is currently an Associate Professor at the Universidad de Salamanca (USAL), Zamora, Spain. His research interest is focused on technologies to industry, medicine, education, and communications.
Nanophotonics , 11(3), 519-529, (2022) (2022)''
Improvement of an InfraRed Pyroelectric Detector Performances in THz Range Using the Terajet Effect
Applied sciences, 11, 701 (2021) (2021)''
Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs
Sensors 21, 688 (2021) https://doi.org/10.3390/s21030688 (2021)''
Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect
Optics Letters , 46, 3061-3064 (2021) (2021)''
Sub-THz Response of Strained-Silicon MODFETs
Phys. Status Solidi A 2017, 1700475; https://doi.org/10.1002/pssa.201700475 (2017)''
Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation
International Journal of High Speed Electronics and Systems Vol. 25, Nos. 3 & 4 (2016) 1640020 (2016)''
Terahertz time domain spectroscopy for chemical identification
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, art. no. 6481377, pp. 199-202. (2013)''
Effect of the gate scaling on the analogue performance of s-Si CMOS devices
Semiconductor Science and Technology, 26 (9), art. no. 095030. (2011)''
Analysis of RF noise performance of Si/SiGe pseudomorphic MOSFETs
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09, art. no. 4800538, pp. 479-482. (2009)''